View HGT1S10N120BNST_7318143.PDF datasheet online --- IC-ON-LINE

Datasheet File OCR Text:

?2002 fairchild semiconductor corporation hgtg10n120bn, hgtp10n120bn, hgt1s10n120bns rev. b1 hgtg10n120bn, hgtp10n120bn, hgt1s10n120bns 35a, 1200v, npt series n-channel igbt the hgtg10n120bn, hgtp10n120bn and hgt1s10n120bns are n on- p unch t hrough (npt) igbt designs. they are new members of the mos gated high voltage switching igbt family. igbts combine the best features of mosfets and bipolar transistors. this device has the high input impedance of a mosfet and the low on- state conduction loss of a bipolar transistor. the igbt is ideal for many high voltage switching applications operating at moderate frequencies where low conduction losses are essential, such as: ac and dc motor controls, power supplies and drivers for solenoids, relays and contactors. formerly developmental type ta49290. symbol features ? 35a, 1200v, t c = 25 o c 1200v switching soa capability typical fall time. . . . . . . . . . . . . . . . 140ns at t j = 150 o c short circuit rating low conduction loss avalanche rated thermal impedance spice model temperature compensating saber? model www.fairchildsemi.com related literature - tb334 ?guidelines for soldering surface mount components to pc boards packaging jedec style to-247 jedec to-220ab (alternate version) jedec to-263ab ordering information part number package brand hgtg10n120bn to-247 g10n120bn hgtp10n120bn to-220ab 10n120bn hgt1s10n120bns to-263ab 10n120bn note: when ordering, use the entire part number. add the suffix t to obtain the to-263ab variant in tape and reel, e.g. HGT1S10N120BNST. c e g g c e collector (flange) g collector e (flange) c g collector e (flange) fairchild semiconductor igbt product is covered by one or more of the following u.s. patents 4,364,073 4,417,385 4,430,792 4,443,931 4,466,176 4,516,143 4,532,534 4,587,713 4,598,461 4,605,948 4,620,211 4,631,564 4,639,754 4,639,762 4,641,162 4,644,637 4,682,195 4,684,413 4,694,313 4,717,679 4,743,952 4,783,690 4,794,432 4,801,986 4,803,533 4,809,045 4,809,047 4,810,665 4,823,176 4,837,606 4,860,080 4,883,767 4,888,627 4,890,143 4,901,127 4,904,609 4,933,740 4,963,951 4,969,027 data sheet august 2002
?2002 fairchild semiconductor corporation hgtg10n120bn, hgtp10n120bn, hgt1s10n120bns rev. b1 absolute maximum ratings t c = 25 o c, unless otherwise specified hgtg10n120bn hgtp10n120bn hgt1s10n120bns units collector to emitter voltage . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .bv ces 1200 v collector current continuous at t c = 25 o c . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . i c25 35 a at t c = 110 o c . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . i c110 17 a collector current pulsed (note 1) . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . i cm 80 a gate to emitter voltage continuous. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . v ges 20 v gate to emitter voltage pulsed . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .v gem 30 v switching safe operating area at t j = 150 o c (figure 2) . . . . . . . . . . . . . . . . . . . . . . . ssoa 55a at 1200v power dissipation total at t c = 25 o c . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . p d 298 w power dissipation derating t c > 25 o c . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 2.38 w/ o c forward voltage avalanche energy (note 2) . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . e av 80 mj operating and storage junction temperature range . . . . . . . . . . . . . . . . . . . . . . . . t j , t stg -55 to 150 o c maximum temperature for soldering leads at 0.063in (1.6mm) from case for 10s. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . t l package body for 10s, see tech brief 334. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .t pkg 300 260 o c o c short circuit withstand time (note 3) at v ge = 15v. . . . . . . . . . . . . . . . . . . . . . . . . . . . . .t sc 8 s short circuit withstand time (note 3) at v ge = 12v. . . . . . . . . . . . . . . . . . . . . . . . . . . . . .t sc 15 s caution: stresses above those listed in ?absolute maximum ratings? may cause permanent damage to the device. this is a stress o nly rating and operation of the device at these or any other conditions above those indicated in the operational sections of this specification is not implied. notes: 1. pulse width limited by maximum junction temperature. 2. i ce = 20a, l = 400 h, t j = 25 o c. 3. v ce(pk) = 840v, t j = 125 o c, r g = 10 ?. electrical specifications t c = 25 o c, unless otherwise specified parameter symbol test conditions min typ max units collector to emitter breakdown voltage bv ces i c = 250 a, v ge = 0v 1200 - - v emitter to collector breakdown voltage bv ecs i c = 10ma, v ge = 0v 15 - - v collector to emitter leakage current i ces v ce = 1200v t c = 25 o c - - 250 a t c = 125 o c - 150 - a t c = 150 o c--2ma collector to emitter saturation voltage v ce(sat) i c = 10a, v ge = 15v t c = 25 o c - 2.45 2.7 v t c = 150 o c-3.74.2v gate to emitter threshold voltage v ge(th) i c = 90 a, v ce = v ge 6.0 6.8 - v gate to emitter leakage current i ges v ge = 20v - - 250 na switching soa ssoa t j = 150 o c, r g = 10?, v ge = 15v, l = 400 h, v ce(pk) = 1200v 55 - - a gate to emitter plateau voltage v gep i c = 10a, v ce = 600v - 10.4 - v on-state gate charge q g(on) i c = 10a, v ce = 600v v ge = 15v - 100 120 nc v ge = 20v - 130 150 nc hgtg10n120bn, hgtp10n120bn, hgt1s10n120bns
?2002 fairchild semiconductor corporation hgtg10n120bn, hgtp10n120bn, hgt1s10n120bns rev. b1 current turn-on delay time t d(on)i igbt and diode at t j = 25 o c i ce = 10a v ce = 960v v ge = 15v r g = 10 ? l = 2mh test circuit (figure 18) -2326ns current rise time t ri -1115ns current turn-off delay time t d(off)i - 165 210 ns current fall time t fi - 100 140 ns turn-on energy (note 5) e on1 -0.320.4 mj turn-on energy (note 5) e on2 -0.851.1 mj turn-off energy (note 4) e off -0.81.0mj current turn-on delay time t d(on)i igbt and diode at t j = 150 o c i ce = 10a v ce = 960v v ge = 15v r g = 10 ? l = 2mh test circuit (figure 18) -2125ns current rise time t ri -1115ns current turn-off delay time t d(off)i - 190 250 ns current fall time t fi - 140 200 ns turn-on energy (note 5) e on1 -0.40.5mj turn-on energy (note 5) e on2 -1.752.3 mj turn-off energy (note 4) e off -1.11.4mj thermal resistance junction to case r jc - - 0.42 o c/w notes: 4. turn-off energy loss (e off ) is defined as the integral of the instantaneous power loss starting at the trailing edge of the input pulse and ending at the point where the collector current equals zero (i ce = 0a). all devices were tested per jedec standard no. 24-1 method for measurement of power device turn-off switching loss. this test method produces the true total turn-off energy loss. 5. values for two turn-on loss conditions are shown for the convenience of the circuit designer. e on1 is the turn-on loss of the igbt only. e on2 is the turn-on loss when a typical diode is used in the test circuit and the diode is at the same t j as the igbt. the diode type is specified in figure 18. electrical specifications t c = 25 o c, unless otherwise specified (continued) parameter symbol test conditions min typ max units typical performance curves unless otherwise specified figure 1. dc collector current vs case temperature figure 2. minimum switching safe operating area t c , case temperature ( o c) i ce , dc collector current (a) 50 0 10 25 75 100 125 150 25 30 15 5 v ge = 15v 20 35 v ce , collector to emitter voltage (v) 1400 40 0 i ce , collector to emitter current (a) 10 20 600 800 400 200 1000 1200 0 50 60 30 t j = 150 o c, r g = 10 ? , v ge = 15v, l = 400 h hgtg10n120bn, hgtp10n120bn, hgt1s10n120bns
?2002 fairchild semiconductor corporation hgtg10n120bn, hgtp10n120bn, hgt1s10n120bns rev. b1 figure 3. operating frequency vs collector to emitter current figure 4. short circuit withstand time figure 5. collector to emitter on-state voltage figure 6. collector to emitter on-state voltage figure 7. turn-on energy loss vs collector to emitter current figure 8. turn-off energy loss vs collector to emitter current typical performance curves unless otherwise specified (continued) i ce , collector to emitter current (a) t j = 150 o c, r g = 10 ? , l = 2mh, v ce = 960v f max , operating frequency (khz) 2 1 10 20 10 50 5 100 f max1 = 0.05 / (t d(off)i + t d(on)i ) r ?jc = 0.42 o c/w, see notes p c = conduction dissipation (duty factor = 50%) f max2 = (p d - p c ) / (e on2 + e off ) t c = 75 o c, v ge = 15v, ideal diode t c v ge 110 o c 12v 15v 15v 75 o c 110 o c 75 o c 12v v ge , gate to emitter voltage (v) i sc , peak short circuit current (a) t sc , short circuit withstand time ( s) 12 13 14 15 16 5 10 15 20 50 100 150 250 t sc i sc 25 200 v ce = 840v, r g = 10 ? , t j = 125 o c 02 4 v ce , collector to emitter voltage (v) i ce , collector to emitter current (a) 0 10 30 6810 40 50 pulse duration = 250 s duty cycle <0.5%, v ge = 12v t c = -55 o c t c = 25 o c t c = 150 o c 20 i ce , collector to emitter current (a) v ce , collector to emitter voltage (v) 20 30 40 0246810 10 50 0 t c = -55 o c t c = 25 o c t c = 150 o c duty cycle <0.5%, v ge = 15v pulse duration = 250 s e on2 , turn-on energy loss (mj) 4 i ce , collector to emitter current (a) 3 2 5 0 5 10 0 15 20 t j = 25 o c, v ge = 12v, v ge = 15v r g = 10 ? , l = 2mh, v ce = 960v 1 t j = 150 o c, v ge = 12v, v ge = 15v 1.5 i ce , collector to emitter current (a) e off , turn-off energy loss (mj) 0 5 0 1.0 0.5 2.0 10 r g = 10 ? , l = 2mh, v ce = 960v t j = 25 o c, v ge = 12v or 15v t j = 150 o c, v ge = 12v or 15v 15 20 hgtg10n120bn, hgtp10n120bn, hgt1s10n120bns
?2002 fairchild semiconductor corporation hgtg10n120bn, hgtp10n120bn, hgt1s10n120bns rev. b1 figure 9. turn-on delay time vs collector to emitter current figure 10. turn-on rise time vs collector to emitter current figure 11. turn-off delay time vs collector to emitter current figure 12. fall time vs collector to emitter current figure 13. transfer characteristic figure 14. gate charge waveforms typical performance curves unless otherwise specified (continued) i ce , collector to emitter current (a) t di , turn-on delay time (ns) 0 15 20 25 30 35 5 40 15 20 r g = 10 ? , l = 2mh, v ce = 960v t j = 25 o c, t j = 150 o c, v ge = 12v t j = 25 o c, t j = 150 o c, v ge = 15v 10 i ce , collector to emitter current (a) t ri , rise time (ns) 0 10 30 20 15 010 520 40 50 r g = 10 ? , l = 2mh, v ce = 960v t j = 25 o c or t j = 150 o c, v ge = 15v t j = 25 o c, t j = 150 o c, v ge = 12v 0 250 5 100 200 i ce , collector to emitter current (a) t d(off)i , turn-off delay time (ns) 15 400 300 350 20 r g = 10 ? , l = 2mh, v ce = 960v 10 v ge = 12v, v ge = 15v, t j = 25 o c v ge = 12v, v ge = 15v, t j = 150 o c 150 i ce , collector to emitter current (a) t fi , fall time (ns) 0 50 150 200 5 100 250 300 20 15 10 t j = 25 o c, v ge = 12v or 15v t j = 150 o c, v ge = 12v or 15v r g = 10 ? , l = 2mh, v ce = 960v i ce , collector to emitter current (a) 0 40 13 8 9 10 12 v ge , gate to emitter voltage (v) 11 60 80 14 15 100 t c = 150 o c t c = -55 o c pulse duration = 250 s duty cycle <0.5%, v ce = 20v 20 t c = 25 o c 7 v ge , gate to emitter voltage (v) q g , gate charge (nc) 5 20 0 060 20 80 v ce = 800v i g (ref) = 1ma, r l = 60 ? , t c = 25 o c v ce = 1200v 10 15 120 v ce = 400v 100 40 hgtg10n120bn, hgtp10n120bn, hgt1s10n120bns
?2002 fairchild semiconductor corporation hgtg10n120bn, hgtp10n120bn, hgt1s10n120bns rev. b1 figure 15. capacitance vs collector to emitter voltage figure 16. collector to emitter on-state voltage figure 17. normalized transient thermal response, junction to case typical performance curves unless otherwise specified (continued) v ce , collector to emitter voltage (v) c, capacitance (nf) c res 0 5 10 15 20 25 0 1 c ies c oes 3 4 frequency = 1mhz 2 i ce , collector to emitter current (a) v ce , collector to emitter voltage (v) 6 12 01 0 2 3 15 duty cycle <0.5%, t c = 110 o c pulse duration = 250 s 9 34 v ge = 10v v ge = 15v t 1 t 2 p d single pulse t 1 , rectangular pulse duration (s) 10 -2 10 -1 10 0 10 -5 10 -3 10 -2 10 -1 10 0 10 -4 duty factor, d = t 1 / t 2 peak t j = (p d x z jc x r jc ) + t c z jc , normalized thermal response 0.5 0.2 0.1 0.05 0.02 0.01 test circuit and waveforms figure 18. inductive switching test circuit figure 19. switching test waveforms r g = 10 ? l = 2mh v dd = 960v + - hgtg10n120bnd t fi t d(off)i t ri t d(on)i 10% 90% 10% 90% v ce i ce v ge e off e on2 hgtg10n120bn, hgtp10n120bn, hgt1s10n120bns
?2002 fairchild semiconductor corporation hgtg10n120bn, hgtp10n120bn, hgt1s10n120bns rev. b1 handling precautions for igbts insulated gate bipolar transistors are susceptible to gate-insulation damage by the electrostatic discharge of energy through the devices. when handling these devices, care should be exercised to assure that the static charge built in the handler ? s body capacitance is not discharged through the device. with proper handling and application procedures, however, igbts are currently being extensively used in production by numerous equipment manufacturers in military, industrial and consumer applications, with virtually no damage problems due to electrostatic discharge. igbts can be handled safely if the following basic precautions are taken: 1. prior to assembly into a circuit, all leads should be kept shorted together either by the use of metal shorting springs or by the insertion into conductive material such as ? eccosorbd ? ld26 ? or equivalent. 2. when devices are removed by hand from their carriers, the hand being used should be grounded by any suitable means - for example, with a metallic wristband. 3. tips of soldering irons should be grounded. 4. devices should never be inserted into or removed from circuits with power on. 5. gate voltage rating - never exceed the gate-voltage rating of v gem . exceeding the rated v ge can result in permanent damage to the oxide layer in the gate region. 6. gate termination - the gates of these devices are essentially capacitors. circuits that leave the gate open- circuited or floating should be avoided. these conditions can result in turn-on of the device due to voltage buildup on the input capacitor due to leakage currents or pickup. 7. gate protection - these devices do not have an internal monolithic zener diode from gate to emitter. if gate protection is required an external zener is recommended. operating frequency information operating frequency information for a typical device (figure 3) is presented as a guide for estimating device performance for a specific application. other typical frequency vs collector current (i ce ) plots are possible using the information shown for a typical unit in figures 5, 6, 7, 8, 9 and 11. the operating frequency plot (figure 3) of a typical device shows f max1 or f max2 ; whichever is smaller at each point. the information is based on measurements of a typical device and is bounded by the maximum rated junction temperature. f max1 is defined by f max1 = 0.05/(t d(off)i + t d(on)i ). deadtime (the denominator) has been arbitrarily held to 10% of the on-state time for a 50% duty factor. other definitions are possible. t d(off)i and t d(on)i are defined in figure 19. device turn-off delay can establish an additional frequency limiting condition for an application other than t jm . t d(off)i is important when controlling output ripple under a lightly loaded condition. f max2 is defined by f max2 = (p d - p c )/(e off + e on2 ). the allowable dissipation (p d ) is defined by p d =(t jm -t c )/r jc . the sum of device switching and conduction losses must not exceed p d . a 50% duty factor was used (figure 3) and the conduction losses (p c ) are approximated by p c =(v ce xi ce )/2. e on2 and e off are defined in the switching waveforms shown in figure 19. e on2 is the integral of the instantaneous power loss (i ce x v ce ) during turn-on and e off is the integral of the instantaneous power loss (i ce xv ce ) during turn-off. all tail losses are included in the calculation for e off ; i.e., the collector current equals zero (i ce = 0). hgtg10n120bn, hgtp10n120bn, hgt1s10n120bns

!"#$%"&'(%& %)'"%&'!%*$%('((!'&$$% "'+'%,'*- %& ''.$'-'( $$%+!% !"'*%("&%%$%%(
/ 0 ! 11 2 2 345

1

23 45 11
3 45 1
1 1 2

1

3

21

6 2 7 1

21

11 2 1

21 11 23 2

$
2 (

( %

1
1 1
1
2

2

1
23
11
2 1

2

1

1

2

1

1

1

2
1

2
"
$
$
(
$

!"# ! $ % &
'( )
* + ,-./ ,
0 " " "!

"# ! 1+#
!% ! 0 #23 #24 #25 (
(+
# 6% 6 7
! 0!$8!#! 0!,8 0!,!
0 +$!
'!

▲Up To Search▲

Price & Availability of HGT1S10N120BNST

	To Download HGT1S10N120BNST Datasheet File
If you can't view the Datasheet, Please click here to try to view without PDF Reader .